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SGT N80-85V Power MOSFET
SGT N80-85V Power MOSFET
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Introduction
云开体育(中国)有限公司科技最新推出的N80-85V SGT系列MOSFET,采用SGT(Shield Gate Trench MOSFET) MOSFET结构及工艺制造方法,具有传统Trench MOSFET低导通损耗的优点,同时具有更低的开关损耗。 SGT MOSFET作为开关器件,广泛应用于新能源电动车BMS、逆变电源系统、电机驱动系统及其他电源管理系统,是其核心的功率控制部件。 除传统TO系列封装外,采用Copper Clip封装工艺的DFN5060产品也即将推出。 云开体育(中国)有限公司科技目前已推出N40V,N60V,N80-85V,N85V,N100V,N120V多个电压平台的系列化解决方案,供客户根据实际需求灵活选择。
Features
1、采用SGT工艺,极低的Rdson和优异的开关特性,带来更低的FOM,减小系统损耗。
2、和传统Trench工艺比Ciss/Qg参数都有大幅优化,设计MOSFET驱动时有更多选择。
3、针对系统应用中的各种异常工作状态,优化MOS产品EAS特性,提高系统可靠性。
SPECIFICATION
YJP120G08A
YJP118G08H
YJG100G08E
YJG100G08A
YJD110G08A
YJB120G08A
YJB118G08H
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