CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application Back
PDF

Introduction 1、TO-247-3L/TO-247-4L and other packages;
2、650V 50A, Si and SiC hybrid packaging products for different applications;
3、It is mainly used for PV/EV charger/Eenergy Storage applications, and adopts advanced trench design technology to meet the requirements of high efficiency of power devices in power conversion system;
4、Other market mainstream products can be completely pin to pin replaced by our related series products;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、1.6um micro-trench design, excellent product performance, with low Vce(sat) and fast switching characteristics;
2、S series product with medium speed for 20-30Khz application demand and H series product with high speed for 30-40Khz;
3、Tjmax=175℃,high reliability;
SPECIFICATION

DGZ50N65CTH2A DGZ50N65CTS2A

Related new products

SGT MOSFET for PV Microinverter

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

Three-phase Rectifier Module N0/N1 Product

IGBT high frequency series C1 module

New 100V 3.2mΩ SGT MOSFET for PD power supply

Small Signal Schottky and Switching Diode in DFN0603 Package

High junction temperature ultrafast recovery diode

NP – sealed MOSFET for cooling fan

N30V Trench MOSFET for PD VBUS

SOD-323HE Diode for Automotive 、Home Appliances, Etc