云开体育（中国）有限公司-官网

Home
About Us
Company History Honor Compliance Newpros
Product

Discrete Chips Integrated circuit

Automotive

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
SMD Rectifier Diode
Fast Recovery Rectifier Diode
SMD Schottky Diode
Transient Voltage Suppressor
ESD Protection Diode
Power MOS Transistor
Power Transistor
Small signal digital transistor
Power Zener Diode
SiC Automotive
IGBT Automotive

Rectifier

Bridge Rectifier
Standard Recovery Rectifier
Fast Recovery Rectifier
High Efficient Rectifier
Super Fast Recovery Rectifier
Schottky Barrier Rectifier
PV Diode
Welded Diode

Automotive Rectifier
Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Protection Diode

Transient Voltage Suppressor
Thyristor Surge Suppressor
ESD Protection Diode
Zener Diode

Thyristor
Uni-directional Thyristor Bi-directional Thyristor

Automotive Protection Diode
Transient Voltage Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal Switching Diode
Small Signal Schottky Diode
Small Signal Zener Diode
Small Signal Transisitor
Small Signal Digital Transisitor
Power Transistor

Automotive Small Signal
Small Signal Switching Diode Small Signal Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital Transisitor

MOSFET

ALL MOSFET
Automotive MOSFET

High-voltage MOSFET(500V-1000V)
SJ MOSFET SiC MOSFET Planner MOSFET

Low & Medium Voltage MOSFET(12V-400V)
N-Channel MOSFET P-Channel MOSFET

NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

IGBT

IGBT Module
IGBT Discrete
IGBT Automotive

Module

Rectifier Diodes Module
Fast Recovery Module
Schottky Module
Thyristor Module
Thyristor / Rectifier Diode Module
Fast/Phase-controlled Thyristor

SiC

SiC Schottky Diode
SiC MOSFET
SiC Schottky Diode Modules
SiC MOSFET Modules
SiC Automotive Schottky Diode
SiC Automotive MOSFET

4/5″wafer

STD Chip
FRD Chip
EPI Chip
TVS Chip
HVB High Voltage Module Chip
Automotive Electronics Chip

6″wafer

TSBD Chip
PSBD Chip
FRED Chip
LBD Chip
PMBD Chip
ESD Chip

Integrated circuit

LOAD Switches
LDO
Shunt Regulator
DC-DC

Product Cross

CN EN

Home

About Us

Newpros

120V SGT process N-channel MOSFET

120V SGT process N-channel MOSFET Back

PDF

Introduction 1. Adopt Yangjie Technology SGT special process to optimize the performance of internal conduction resistance (Rdson) and gate charge (Qg) according to the requirements of motor drive and power supply application, reduce conduction loss and switching loss, and improve system efficiency;
2. Solve the problem of high side voltage spike caused by high DI/DT when high-speed Gan power supply is applied, and improve the overall reliability of the product.

Features 1. Adopt Yangjie SGT special process design, with higher process stability and reliability;
2. The series products have faster switching speed, smaller gate charge and higher application efficiency;
3. Using PDFN5060 package, better thermal resistance characteristics.

SPECIFICATION

YJG88G12A

Related new products